Dr. milton vazquez

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  • this sample was prepared at 800 C and 145 seconds with oxygen flow at low pressure in the quartz tube
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    Information about the sample:

    • Shape: Flat surface

    • Sample material: Silicon wafer

    • Sample composition: SiO2

    Data acquisition parameters:

    • Photon source: Al Ka (monochromatic)

    • Take-off angle: 5-65

    Equipment and analysis software:

    • Model: 110

    xpsoasis_127_image_100.png
  • Growth in RTA @800°C by 290s, then etching, this data corresponds to the last etching at 1800s. ARXPS 0-65°
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    Information about the sample:

    • Shape: Flat Surface

    • Sample material: Si wafer

    • Elements: Si2p

    • Sample composition: SiOx

    Data acquisition parameters:

    • Photon source: Al Ka (monochromatic)

    • Pass energy: 20

    • Take-off angle: 0-65

    Equipment and analysis software:

    • Brand: SPECS

    • Model: Phoibos 150

    • Spectrometer mode: MediumArea:1.5kV

    • Software used: Analyzer

    xpsoasis_477_image_100.png
  • From Vince database, data adquire on April 2003.
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    Information about the sample:

    • Elements: Thallium

    Data acquisition parameters:

    • Photon source: Al Ka monochromatic

    • Pass energy: 14.27

    Equipment and analysis software:

    • Spectrometer mode: FAT

    • Software used: AAnalyzer

    xpsoasis_611_image_100.jpg

Full name:

milton vazquez

Title:

Doctor

organization:

Universidad de Guadalajara

Country:

Mexico

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Moderator in elements:

Moderator in forum:

Number of post in database:

0

Number of post:

Total: 2

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