Post "Ga 2p in InGaAs"

forum: Ga 2p

from: Dr. Oscar Ceballos Sanchez

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  • Ga 2p in InGaAs (Ga 2p forum)

    Ga in InGaAs substrate treated thermally at 300 °C.
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    Information about the sample:

    • Shape: Flat Surface

    • Sample material: InGaAs

    • Elements: In, Ga, As

    Data acquisition parameters:

    • Photon source: Al Ka (monochromatic)

    • Pass energy: 15

    • Take-off angle: 85

    Equipment and analysis software:

    • Software used: Analyzer

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Full name:

Oscar Ceballos Sanchez

Title:

Doctor

organization:

Universidad de Guadalajara

Country:

México

This user is:

Moderator in elements:

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