Dr. Oscar Ceballos Sanchez

89 Spicer points

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Posts in Database

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  • Oscar

    Date: 2021-05-20 21:31

    C in TiO2 powder synthetized by Molten Salt method
    Read more

    Information about the sample:

    • Shape: Powder

    • Sample material: TiO2_MS

    • Elements: Ti, O, C

    • Sample composition: TiO2

    Data acquisition parameters:

    • Photon source: Al Ka (monochromatic)

    • Pass energy: 15

    • Take-off angle: 90

    xpsoasis_219_image_100.jpg

    1 votes

  • Oscar

    Date: 2021-05-20 21:02

    C in ZnO films deposited by sputtering. Three components are observed which can be associated to C-C, C-O and C=O bonds.
    Read more

    Information about the sample:

    • Shape: Flat surface

    • Sample material: ZnO

    • Elements: Zn, C, O

    • Sample composition: ZnO

    Data acquisition parameters:

    • Photon source: Al Ka (monochromatic)

    • Pass energy: 15

    • Take-off angle: 90

    xpsoasis_216_image_100.jpg

    0 votes

  • Oscar

    Date: 2021-05-20 21:15

    C in ZnO films deposited by Sol-Gel Method
    Read more

    Information about the sample:

    • Shape: Flat surface

    • Sample material: ZnO

    • Elements: Zn, C, O

    • Sample composition: ZnO

    Data acquisition parameters:

    • Photon source: Al Ka (monochromatic)

    • Pass energy: 15

    • Take-off angle: 90

    xpsoasis_217_image_100.jpg

    0 votes

  • Oscar

    Date: 2021-05-20 21:25

    C in PbS film deposited by chemical bath deposition method
    Read more

    Information about the sample:

    • Shape: Flat surface

    • Sample material: PbS

    • Elements: Pb, S, O, C

    • Sample composition: PbS

    Data acquisition parameters:

    • Photon source: Al Ka (monochromatic)

    • Pass energy: 15

    • Take-off angle: 90

    xpsoasis_218_image_100.jpg

    0 votes

  • Oscar

    Date: 2022-04-26 02:00

    InGaAs deposited by MBE on GaAs substrate. As 3d in InGaAs treated thermally at 300 °C.Read more
    Read more

    Information about the sample:

    • Shape: Flat Surface

    • Sample material: InGaAs

    • Elements: InGaAs

    Data acquisition parameters:

    • Pass energy: 15

    • Take-off angle: 85

    xpsoasis_559_image_100.jpg

    0 votes

  • Oscar

    Date: 2021-10-06 01:55

    As 3d
    InGaAs substrate deposited by MBE technique.
    Read more

    Information about the sample:

    • Shape: Flat Surface

    • Sample material: InGaAs substrate

    • Elements: In, As, Ga

    Data acquisition parameters:

    • Photon source: Al Ka (monochromatic)

    • Pass energy: 15

    Equipment and analysis software:

    • Software used: Analyzer

    xpsoasis_370_image_100.png

    0 votes

  • Oscar

    Date: 2021-04-13 04:53

    InGaAs deposited by MBE on GaAs substrate. In 3d in InGaAs treated thermally at 300 °C.
    Read more

    Information about the sample:

    • Shape: Flat Surface

    • Sample material: InGaAs

    • Elements: In

    • Sample composition: In0.2Ga0.8As

    Data acquisition parameters:

    • Photon source: Al Ka (monochromatic)

    • Pass energy: 15

    • Take-off angle: 85

    Equipment and analysis software:

    • Brand: ?

    • Model: ?

    • Spectrometer mode: ?

    • Software used: Analyzer

    xpsoasis_58_image_100.png

    2 votes

  • Oscar

    Date: 2021-10-09 02:01

    Ga 3d
    Ga 3d in InGaAs substrate treated thermally at 300 °C.
    Read more

    Information about the sample:

    • Shape: Flat Surface

    • Sample material: InGaAs substrate

    • Elements: In, Ga, As

    Data acquisition parameters:

    • Photon source: Al Ka (monochromatic)

    • Pass energy: 15

    • Take-off angle: 85

    xpsoasis_398_image_100.png

    0 votes

  • Oscar

    Date: 2021-10-09 02:29

    Se 3d
    Se 3d spectrum obtained from ZnSe film
    Read more

    Information about the sample:

    • Shape: Flat Surface

    • Sample material: ZnSe film

    • Elements: Zn, Se

    Data acquisition parameters:

    • Photon source: Al Ka (monochromatic)

    • Pass energy: 15

    • Take-off angle: 90

    Equipment and analysis software:

    • Software used: Analyzer

    xpsoasis_399_image_100.png

    0 votes

  • Database

    Oscar

    Date: 2021-05-20 20:26

    ZnO film deposited by sol-gel-method
    Read more

    Information about the sample:

    • Shape: Flat surface

    • Sample material: ZnO

    • Elements: O, Zn, C

    Data acquisition parameters:

    • Photon source: Al Ka (monochromatic)

    • Pass energy: 15

    • Take-off angle: 90

    Equipment and analysis software:

    • Spectrometer mode: Standard

    xpsoasis_214_image_100.jpg

    1 votes

  • Oscar

    Date: 2022-04-26 04:28

    Ga in InGaAs substrate treated thermally at 300 °C.
    Read more

    Information about the sample:

    • Shape: Flat Surface

    • Sample material: InGaAs

    • Elements: In, Ga, As

    Data acquisition parameters:

    • Photon source: Al Ka (monochromatic)

    • Pass energy: 15

    • Take-off angle: 85

    Equipment and analysis software:

    • Software used: Analyzer

    xpsoasis_560_image_100.png

    0 votes

  • Database

    Oscar

    Date: 2021-05-20 20:26

    ZnO film deposited by sol-gel-method
    Read more

    Information about the sample:

    • Shape: Flat surface

    • Sample material: ZnO

    • Elements: O, Zn, C

    Data acquisition parameters:

    • Photon source: Al Ka (monochromatic)

    • Pass energy: 15

    • Take-off angle: 90

    Equipment and analysis software:

    • Spectrometer mode: Standard

    xpsoasis_214_image_100.jpg

    1 votes

Full name:

Oscar Ceballos Sanchez

Title:

Doctor

organization:

Universidad de Guadalajara

Country:

México

This user is:

Moderator in elements:

Ga
Ge
As
Se
Br
Kr

Number of post in database:

1

Number of post:

Total: 7

C 1s
(4 posts )
As 3d
(2 posts )
In 3d
(1 posts )
Ga 3d
(1 posts )
Se 3d
(1 posts )
O 1s
(1 posts )
Ga 2p
(1 posts )