InGaAs deposited by MBE on GaAs substrate.
As 3d in InGaAs treated thermally at 300 °C.Read more
Read moreShape: Flat Surface
Sample material: InGaAs
Elements: InGaAs
Pass energy: 15
Take-off angle: 85
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Date: 2022-04-26 02:00
Shape: Flat Surface
Sample material: InGaAs
Elements: InGaAs
Pass energy: 15
Take-off angle: 85
Date: 2022-04-26 01:20
Sample material: GaAs
Elements: Ga, As, O
Photon source: Al Ka monochromatic
Pass energy: 54.92
Take-off angle: 90
Software used: AAnalyzer
Date: 2021-10-06 01:55
Shape: Flat Surface
Sample material: InGaAs substrate
Elements: In, As, Ga
Photon source: Al Ka (monochromatic)
Pass energy: 15
Software used: Analyzer
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