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  • Ga 3d in InGaAs substrate treated thermally at 300 °C.
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    Information about the sample:

    • Shape: Flat Surface

    • Sample material: InGaAs substrate

    • Elements: In, Ga, As

    Data acquisition parameters:

    • Photon source: Al Ka (monochromatic)

    • Pass energy: 15

    • Take-off angle: 85

    xpsoasis_398_image_100.png

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