Ga in InGaAs substrate treated thermally at 300 °C.
Read moreShape: Flat Surface
Sample material: InGaAs
Elements: In, Ga, As
Photon source: Al Ka (monochromatic)
Pass energy: 15
Take-off angle: 85
Software used: Analyzer
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Date: 2022-04-26 04:28
Shape: Flat Surface
Sample material: InGaAs
Elements: In, Ga, As
Photon source: Al Ka (monochromatic)
Pass energy: 15
Take-off angle: 85
Software used: Analyzer
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