Post "In in InGaAs"

forum: In 3d

from: Dr. Oscar Ceballos Sanchez

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  • Oscar

    Date: 2021-04-13 04:53

    In in InGaAs (In 3d forum)

    InGaAs deposited by MBE on GaAs substrate. In 3d in InGaAs treated thermally at 300 °C.
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    Information about the sample:

    • Shape: Flat Surface

    • Sample material: InGaAs

    • Elements: In

    • Sample composition: In0.2Ga0.8As

    Data acquisition parameters:

    • Photon source: Al Ka (monochromatic)

    • Pass energy: 15

    • Take-off angle: 85

    Equipment and analysis software:

    • Brand: ?

    • Model: ?

    • Spectrometer mode: ?

    • Software used: Analyzer

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    2 votes

Full name:

Oscar Ceballos Sanchez

Title:

Doctor

organization:

Universidad de Guadalajara

Country:

México

This user is:

Moderator in elements:

Ga
Ge
As
Se
Br
Kr

Number of post in database:

1

Number of post:

Total: 8

C 1s
(4 posts )
As 3d
(3 posts )
Ga 2p
(1 posts )
Ga 3d
(1 posts )
In 3d
(1 posts )
O 1s
(1 posts )
Se 3d
(1 posts )
S 2p
(1 posts )