Post "Oxygen in hafnium oxide obtained by ALD "

forum: O 1s

from: Engr. Dulce María Guzmán Bucio

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Dulce María
Date: 2021-05-11 00:52
Oxygen in hafnium oxide obtained by ALD (O 1s forum)
O 1s spectra was obtained from the surface of a hafnium oxide sample that was deposited by atomic layer deposition over Si(1 0 0) wafers. The component at ~530 eV is associated to Hf-O bonding in hafnium oxide. The component at 532 eV has contributions from the oxygen of the superficial hydroxil groups and from the oxygen in hafnium silicate at the interface HfO2/Si.
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Information about the sample:
Shape: Flat surface
Sample material: Hafnium oxide
Elements: Hf, O, Si
Sample composition: HfO2/HfSiO2/Si
Data acquisition parameters:
Photon source: Al Ka monochromatic
Take-off angle: 85°
Equipment and analysis software:
Brand: ThermoFisher
Model: Alpha 110
Spectrometer mode: large angle, small area
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Full name:

Dulce María Guzmán Bucio

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Engineer

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Cinvestav

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